Specification	SIHF7N60E-E3

Current - Continuous Drain (Id) (Tc)	7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	40 nC
Input Capacitance (Ciss) (Max)	680 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	TO-220 Full Pack
Power Dissipation (Max)	31 W
Rds On (Max)	600 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHF7 Series

Part	Vgs (Max)	Technology	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Rds On (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Package / Case	Input Capacitance (Ciss) (Max)
Vishay Dale SIHF7N60E-E3	30 V	MOSFET (Metal Oxide)	4 V	-55 °C	150 °C	40 nC	10 V	TO-220 Full Pack	600 mOhm	Through Hole	600 V	31 W	N-Channel	7 A	TO-220-3 Full Pack	680 pF
Vishay Dale SIHF7N60E-GE3	30 V	MOSFET (Metal Oxide)	4 V	-55 °C	150 °C	40 nC	10 V	TO-220 Full Pack	600 mOhm	Through Hole	600 V	31 W	N-Channel	7 A	TO-220-3 Full Pack	680 pF

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