IXFK73N30

Obsolete

IXYS

MOSFET N-CH 300V 73A TO264AA

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Obsolete

IXYS

MOSFET N-CH 300V 73A TO264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK73N30

Current - Continuous Drain (Id) @ 25°C	73 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	360 nC
Input Capacitance (Ciss) (Max) @ Vds	9000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)
IXYS IXFK73N30	Through Hole	MOSFET (Metal Oxide)	TO-264-3 TO-264AA	360 nC	TO-264AA (IXFK)	10 V	9000 pF	45 mOhm	73 A	20 V	N-Channel	300 V	-55 °C	150 °C	4 V	500 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 300 V 73A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources

No documents available