Specification	SPB16N50C3ATMA1

Current - Continuous Drain (Id) (Tc)	16 A
Drain to Source Voltage (Vdss)	560 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	66 nC, 66 nC
Input Capacitance (Ciss) (Max)	1600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3-2
Power Dissipation (Max)	160 W
Rds On (Max)	280 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.9 V

SPB16N Series

Part	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Package / Case	Package Name	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Vgs (Max)	Power Dissipation (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)
INFINEON SPB16N50C3ATMA1	16 A	560 V	66 nC 66 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	PG-TO263-3-2	1600 pF	3.9 V	20 V	160 W	N-Channel	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	10 V	280 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources

No documents available