STU10P6F6

Obsolete

STMicroelectronics

MOSFET P-CH 60V 10A IPAK

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Obsolete

STMicroelectronics

MOSFET P-CH 60V 10A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU10P6F6

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.4 nC
Input Capacitance (Ciss) (Max) @ Vds	340 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Power Dissipation (Max) [Max]	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	FET Type
STMicroelectronics STU10P6F6	10 V	10 A	160 mOhm	20 V	TO-251 (IPAK)	175 °C	6.4 nC	4 V	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	35 W	MOSFET (Metal Oxide)	60 V	340 pF	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 10A (Tc) 35W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources