W5139TJ480

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IXYS

DIODE GEN PURP 4.8KV 5139A W89

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Active

IXYS

DIODE GEN PURP 4.8KV 5139A W89

Technical Specifications

Parameters and characteristics for this part

Specification	W5139TJ480

Current - Average Rectified (Io)	5139 A
Current - Reverse Leakage @ Vr	100 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	160 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-200AE
Reverse Recovery Time (trr)	57 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	W89
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	4800 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

DIODE GEN PURP 4.8KV 5139A W89

Part	Current - Average Rectified (Io)	Mounting Type	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Supplier Device Package
IXYS W5139TJ480	5139 A	Chassis Mount	Standard	DO-200AE	1.25 V	Standard Recovery >500ns	200 mA	-40 °C	160 °C	4800 V	57 µs	100 mA	W89

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Box	12	$ 424.30

General part information

Diode 4800 V 5139A Chassis Mount W89

Technical documentation and resources

No documents available