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STD13N60DM2

STD13N60DM2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.310 OHM TYP., 11 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

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STD13N60DM2

STD13N60DM2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.310 OHM TYP., 11 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

Find alt

Description

General part information

STD13N60DM2 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD13N60DM2
Current - Continuous Drain (Id) (Tc)11 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)19 nC
Input Capacitance (Ciss) (Max)730 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPak
Power Dissipation (Max)110 W
Rds On (Max)365 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)5 V

Pricing

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