APT20F50B

Active

Microsemi Corporation

MOSFET N-CH 500V 20A TO247

Search across all available documentation for this part.

Active

Microsemi Corporation

MOSFET N-CH 500V 20A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	APT20F50B

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Input Capacitance (Ciss) (Max) @ Vds	2950 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	290 W
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	TO-247 [B]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Microsemi Corporation APT20F50B	75 nC	N-Channel	Through Hole	-55 °C	150 °C	500 V	5 V	290 W	TO-247 [B]	2950 pF	MOSFET (Metal Oxide)	10 V	30 V	TO-247-3	300 mOhm	20 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 20A (Tc) 290W (Tc) Through Hole TO-247 [B]

Technical documentation and resources