STI21NM60ND

Obsolete

STMicroelectronics

MOSFET N-CH 600V 17A I2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 600V 17A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STI21NM60ND

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	220 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Power Dissipation (Max)	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
STMicroelectronics STI21NM60ND	150 °C	17 A	5 V	I2PAK	N-Channel	1800 pF	600 V	10 V	MOSFET (Metal Oxide)	Through Hole	140 W	I2PAK TO-262-3 Long Leads TO-262AA	25 V	60 nC	220 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 17A (Tc) 140W (Tc) Through Hole I2PAK

Technical documentation and resources