Specification	SISH107DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	12.6 A
Current - Continuous Drain (Id) (Tc)	34.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	41 nC
Input Capacitance (Ciss) (Max)	1400 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8SH
Package Name	PowerPAK® 1212-8SH
Power Dissipation (Max)	3.57 W, 26.5 W
Rds On (Max)	14 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SISH107 Series

Part	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Technology	FET Type	Rds On (Max)	Package Name	Power Dissipation (Max)
Vishay Dale SISH107DN-T1-GE3	12.6 A	34.4 A	30 V	PowerPAK® 1212-8SH	2.5 V	-55 °C	150 °C	41 nC	Surface Mount	1400 pF	10 V	4.5 V	20 V	MOSFET (Metal Oxide)	P-Channel	14 mOhm	PowerPAK® 1212-8SH	3.57 W 26.5 W

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