IPI45P03P4L11AKSA1

Obsolete

Infineon Technologies

MOSFET P-CH 30V 45A TO262-3

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Obsolete

Infineon Technologies

MOSFET P-CH 30V 45A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI45P03P4L11AKSA1

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	3770 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	58 W
Rds On (Max) @ Id, Vgs	11.1 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	5 V
Vgs (Max) [Min]	-16 V
Vgs(th) (Max) @ Id	2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IPI45P03P4L11AKSA1	3770 pF	MOSFET (Metal Oxide)	4.5 V 10 V	58 W	P-Channel	-55 °C	175 ░C	Through Hole	55 nC	5 V	-16 V	2 V	30 V	PG-TO262-3	I2PAK TO-262-3 Long Leads TO-262AA	11.1 mOhm	45 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 45A (Tc) 58W (Tc) Through Hole PG-TO262-3

Technical documentation and resources