BAS116E6433HTMA1

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23

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Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	BAS116E6433HTMA1

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage @ Vr	5 nA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	1500 ns
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	PG-SOT23
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Package / Case	Mounting Type	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Speed	Speed	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)
Infineon Technologies BAS116E6327HTSA1	1.25 V	Standard	2 pF	1500 ns	SC-59 SOT-23-3 TO-236-3	Surface Mount	150 °C	80 V	PG-SOT23	Standard Recovery >500ns	200 mA	5 nA	250 mA
Infineon Technologies BAS116E6433HTMA1	1.25 V	Standard	2 pF	1500 ns	SC-59 SOT-23-3 TO-236-3	Surface Mount	150 °C	80 V	PG-SOT23	Standard Recovery >500ns	200 mA	5 nA	250 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 80 V 250mA Surface Mount PG-SOT23

Technical documentation and resources