TK160F10N1L,LXGQ

Active

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 160A TO220SM

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 160A TO220SM

Technical Specifications

Parameters and characteristics for this part

Specification	TK160F10N1L,LXGQ

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	122 nC
Input Capacitance (Ciss) (Max) @ Vds	10100 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	TO-220SM(W)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature	Supplier Device Package	Power Dissipation (Max) [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage TK160F10N1,LXGQ	8510 pF	Surface Mount	175 °C	TO-220SM(W)	375 W	N-Channel	MOSFET (Metal Oxide)	100 V	2.4 mOhm	121 nC	20 V	10 V	160 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Toshiba Semiconductor and Storage TK160F10N1L,LXGQ	10100 pF	Surface Mount	175 °C	TO-220SM(W)	375 W	N-Channel	MOSFET (Metal Oxide)	100 V	2.4 mOhm	122 nC	20 V	6 V 10 V	160 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 160A (Ta) 375W (Tc) Surface Mount TO-220SM(W)

Technical documentation and resources