BYV415K-600PQ

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WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 600V 15A TO3P

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WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 600V 15A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	BYV415K-600PQ

Current - Average Rectified (Io) (per Diode)	15 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SC-65-3, TO-3P-3
Reverse Recovery Time (trr)	45 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-3P
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.1 V

Part	Package / Case	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Mounting Type	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Reverse Recovery Time (trr)	Technology	Voltage - Forward (Vf) (Max) @ If
WeEn Semiconductors Co., Ltd BYV415W-600PQ	TO-247-3	TO-247-3	600 V	1 Pair Common Cathode	Through Hole	200 mA 500 ns	175 ░C	-65 C	10 µA	15 A	45 ns	Standard	2.1 V
WeEn Semiconductors Co., Ltd BYV415J-600PQ	SC-93-3 TO-3PFM	TO-3PF			Through Hole
WeEn Semiconductors Co., Ltd BYV415K-600PQ	SC-65-3 TO-3P-3	TO-3P	600 V	1 Pair Common Cathode	Through Hole	200 mA 500 ns	175 ░C	-65 C	10 µA	15 A	45 ns	Standard	2.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 600 V 15A Through Hole TO-3P-3, SC-65-3

Technical documentation and resources

No documents available