IXKC23N60C5

Obsolete

IXYS

MOSFET N-CH 600V 23A ISOPLUS220

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Obsolete

IXYS

MOSFET N-CH 600V 23A ISOPLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXKC23N60C5

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	2800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUS220™
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	FET Type	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXKC23N60C5	20 V	600 V	MOSFET (Metal Oxide)	N-Channel	Through Hole	ISOPLUS220™	23 A	10 V	ISOPLUS220™	80 nC	100 mOhm	2800 pF	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 23A (Tc) Through Hole ISOPLUS220™

Technical documentation and resources

No documents available