STGF20NB60S

Obsolete

STMicroelectronics

IGBT 600V 24A 40W TO220FP

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STGF20NB60S

Obsolete

STMicroelectronics

IGBT 600V 24A 40W TO220FP

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGF20NB60S

Current - Collector (Ic) (Max) [Max]	24 A
Current - Collector Pulsed (Icm)	70 A
Gate Charge	83 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	40 W
Supplier Device Package	TO-220FP
Switching Energy	840 µJ, 7.4 mJ
Td (on/off) @ 25°C	1.1 µs, 92 ns
Test Condition	100 Ohm, 480 V, 20 A, 15 V
Vce(on) (Max) @ Vge, Ic	1.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

STGF20H65DFB2 Series

Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220FP package

Part	Power - Max [Max]	Mounting Type	IGBT Type	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Reverse Recovery Time (trr)	Supplier Device Package	Test Condition	Gate Charge	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Package / Case	Switching Energy	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
STMicroelectronics STGF20H65DFB2	45 W	Through Hole	Trench Field Stop	60 A	-55 °C	175 ░C	215 ns	TO-220FP	10 Ohm 15 V 20 A 400 V	56 nC	16 ns 78.8 ns	2.1 V	TO-220-3 Full Pack	214 µJ 265 µJ	650 V	40 A
STMicroelectronics STGF20M65DF2	32.6 W	Through Hole	Trench Field Stop	80 A	-55 °C	175 ░C	166 ns	TO-220FP	12 Ohm 15 V 20 A 400 V	63 nC	26 ns 108 ns	2 V	TO-220-3 Full Pack	140 µJ 560 µJ	650 V	40 A
STMicroelectronics STGF20NB60S	40 W	Through Hole		70 A	-55 °C	150 °C		TO-220FP	15 V 20 A 100 Ohm 480 V	83 nC	1.1 µs 92 ns	1.7 V	TO-220-3 Full Pack	7.4 mJ 840 µJ		24 A	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STGF20H65DFB2 Series

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Documents

Technical documentation and resources

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