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Description

General part information

STGF20 Series

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGF20NB60S
Current - Collector (Ic) (Max)24 A
Current - Collector Pulsed (Icm)70 A
Gate Charge83 nC
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220FP
Power - Max40 W
Switching Energy (Off)7.4 mJ
Switching Energy (On)840 µJ
Td (off) @ 25°C1.1 µs
Td (on) @ 25°C92 ns
Test Condition Current20 A
Test Condition Resistance100 Ohm
Test Condition Voltage480 V
Test Condition Voltage (Secondary)15 V
Vce(on) (Max)1.7 V
Voltage - Collector Emitter Breakdown (Max)600 V

Pricing

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