TK3R1A04PL,S4X

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 82A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 82A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK3R1A04PL,S4X

Current - Continuous Drain (Id) @ 25°C	82 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63.4 nC
Input Capacitance (Ciss) (Max) @ Vds	4670 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	36 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)
Toshiba Semiconductor and Storage TK3R1A04PL,S4X	TO-220-3 Full Pack	3.8 mOhm	TO-220SIS	40 V	4.5 V 10 V	N-Channel	2.4 V	Through Hole	82 A	36 W	175 °C	63.4 nC	4670 pF	MOSFET (Metal Oxide)	20 V

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General part information

N-Channel 40 V 82A (Tc) 36W (Tc) Through Hole TO-220SIS

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