2SA1869-Y(JKT,Q,M)

Obsolete

TRANS PNP 50V 3A TO220NIS

Obsolete

TRANS PNP 50V 3A TO220NIS

Description

General part information

Bipolar (BJT) Transistor PNP 50 V 3 A 100MHz 10 W Through Hole TO-220NIS

Parameters and characteristics for this part

Specification	2SA1869-Y(JKT,Q,M)

Current - Collector (Ic) (Max)	3 A
Current - Collector Cutoff (Max)	1 µA
DC Current Gain (hFE) (Min)	70
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Package Name	TO-220NIS
Power - Max	10 VA
Transistor Type	PNP
Vce Saturation (Max)	600 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

Part	DC Current Gain (hFE) (Min)	Mounting Type	Vce Saturation (Max)	Operating Temperature	Current - Collector Cutoff (Max)	Voltage - Collector Emitter Breakdown (Max)	Power - Max	Package / Case	Frequency - Transition	Transistor Type	Package Name	Current - Collector (Ic) (Max)
Toshiba Semiconductor and Storage 2SA1869-Y(Q,M)	70	Through Hole	600 mV	150 °C	1 µA	50 V	10 VA	TO-220-3 Full Pack	100 MHz	PNP	TO-220NIS	3 A
Toshiba Semiconductor and Storage 2SA1869-Y,MTSAQ(J	70	Through Hole	600 mV	150 °C	1 µA	50 V	10 VA	TO-220-3 Full Pack	100 MHz	PNP	TO-220NIS	3 A
Toshiba Semiconductor and Storage 2SA1869-Y(JKT,Q,M)	70	Through Hole	600 mV	150 °C	1 µA	50 V	10 VA	TO-220-3 Full Pack	100 MHz	PNP	TO-220NIS	3 A

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