TSM048NB06LCR RLG

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Taiwan Semiconductor Corporation

MOSFET N-CH 60V 16A/107A 8PDFN

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Taiwan Semiconductor Corporation

MOSFET N-CH 60V 16A/107A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM048NB06LCR RLG

Current - Continuous Drain (Id) @ 25°C	16 A, 107 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC
Input Capacitance (Ciss) (Max) @ Vds	6253 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerLDFN
Power Dissipation (Max)	3.1 W, 136 W
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	8-PDFN
Supplier Device Package [x]	5.2
Supplier Device Package [y]	5.75
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)
Taiwan Semiconductor Corporation TSM048NB06LCR RLG	8-PowerLDFN	8-PDFN	5.75	5.2	Surface Mount	105 nC	16 A 107 A	N-Channel	4.5 V 10 V	4.8 mOhm	20 V	60 V	MOSFET (Metal Oxide)	6253 pF	-55 °C	175 ░C	2.5 V	3.1 W 136 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 16A (Ta), 107A (Tc) 3.1W (Ta), 136W (Tc) Surface Mount 8-PDFN (5.2x5.75)