TK20G60W,RVQ

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Toshiba Semiconductor and Storage

MOSFET N CH 600V 20A D2PAK

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Toshiba Semiconductor and Storage

MOSFET N CH 600V 20A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK20G60W,RVQ

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	1680 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	165 W
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

Part	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Operating Temperature	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage TK20G60W,RVQ	3.7 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	N-Channel	Surface Mount	48 nC	165 W	D2PAK	30 V	1680 pF	600 V	MOSFET (Metal Oxide)	150 °C	20 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 20A (Ta) 165W (Tc) Surface Mount D2PAK

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