IXFN27N80

IXYS

MOSFET N-CH 800V 27A SOT-227B

Search across all available documentation for this part.

IXYS

MOSFET N-CH 800V 27A SOT-227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN27N80

Current - Continuous Drain (Id) @ 25°C	27 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	400 nC
Input Capacitance (Ciss) (Max) @ Vds	9740 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	520 W
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Power Dissipation (Max) [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXFN27N80Q	SOT-227B	320 mOhm	-55 °C	150 °C	20 V	SOT-227-4 miniBLOC	520 W	MOSFET (Metal Oxide)	10 V	800 V	N-Channel	170 nC	27 A	4.5 V	7600 pF	Chassis Mount
IXYS IXFN27N80	SOT-227B	300 mOhm	-55 °C	150 °C	20 V	SOT-227-4 miniBLOC	520 W	MOSFET (Metal Oxide)	10 V 15 V	800 V	N-Channel		27 A	4.5 V	9740 pF	Chassis Mount	400 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	10	$ 27.89

General part information

N-Channel 800 V 27A (Tc) 520W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available