STW240N10F7

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STMicroelectronics

MOSFET N-CH 100V 180A TO247

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STMicroelectronics

MOSFET N-CH 100V 180A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	STW240N10F7

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Input Capacitance (Ciss) (Max) @ Vds	11550 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

MOSFET N-CH 100V 180A TO247

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Vgs (Max)	Power Dissipation (Max) [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STW240N10F7	TO-247-3	3 mOhm	160 nC	Through Hole	MOSFET (Metal Oxide)	20 V	300 W	N-Channel	10 V	-55 °C	175 ░C	TO-247-3	11550 pF	4.5 V	100 V	180 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 180A (Tc) 300W (Tc) Through Hole TO-247-3

Technical documentation and resources

No documents available