
2N5010
ActiveMicrosemi Corporation
NPN SILICON TRANSISTOR

2N5010
ActiveMicrosemi Corporation
NPN SILICON TRANSISTOR
Description
General part information
2N5010 Series
Bipolar (BJT) Transistor NPN 500 V 200 mA 1 W Through Hole TO-5AA
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5010 |
|---|---|
| Current - Collector (Ic) (Max) | 0.2 mA |
| Current - Collector Cutoff (Max) | 0.01 µA |
| DC Current Gain (hFE) (Min) | 30 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-5-3 Metal Can, TO-205AA |
| Package Name | TO-5AA |
| Power - Max | 1 VA |
| Transistor Type | NPN |
| Vce Saturation (Max) | 1.4 V |
| Voltage - Collector Emitter Breakdown (Max) | 500 V |
Pricing
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