IXFM67N10

Obsolete

IXYS

MOSFET N-CH 100V 67A TO204AE

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Obsolete

IXYS

MOSFET N-CH 100V 67A TO204AE

Technical Specifications

Parameters and characteristics for this part

Specification	IXFM67N10

Current - Continuous Drain (Id) @ 25°C	67 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC
Input Capacitance (Ciss) (Max) @ Vds	4500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	TO-204AE
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	FET Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id [Max]
IXYS IXFM67N10	10 V	20 V	TO-204AE	4500 pF	-55 °C	150 °C	67 A	Through Hole	260 nC	25 mOhm	100 V	MOSFET (Metal Oxide)	N-Channel	300 W	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 67A (Tc) 300W (Tc) Through Hole TO-204AE

Technical documentation and resources

No documents available