IXFL80N50Q2

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IXYS

MOSFET N-CH 500V 55A ISOPLUS264

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IXYS

MOSFET N-CH 500V 55A ISOPLUS264

Technical Specifications

Parameters and characteristics for this part

Specification	IXFL80N50Q2

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC
Input Capacitance (Ciss) (Max) @ Vds	10500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	625 W
Rds On (Max) @ Id, Vgs	66 mOhm
Supplier Device Package	ISOPLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
IXYS IXFL80N50Q2	ISOPLUS264™	625 W	Through Hole	500 V	-55 °C	150 °C	30 V	N-Channel	10500 pF	5 V	TO-264-3 TO-264AA	260 nC	MOSFET (Metal Oxide)	55 A	66 mOhm	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 55A (Tc) 625W (Tc) Through Hole ISOPLUS264™

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