2SJ601-ZK-E1-AZ

Active

Renesas Electronics Corporation

PCH POWER MOSFET -60V -36A 31MOHM TO-252 / DPAK

Search across all available documentation for this part.

Active

Renesas Electronics Corporation

PCH POWER MOSFET -60V -36A 31MOHM TO-252 / DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	2SJ601-ZK-E1-AZ

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds	3300 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	65 W, 1 W
Rds On (Max) @ Id, Vgs	31 mOhm
Supplier Device Package	MP-3ZK
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Pch Power MOSFET -60V -36A 31mohm TO-252 / DPAK

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Supplier Device Package	Operating Temperature	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation 2SJ601-ZK-E1-AZ	63 nC	MP-3ZK	TO-252	150 °C	31 mOhm	2.5 V	20 V	N-Channel	3300 pF	1 W, 65 W	MOSFET (Metal Oxide)	36 A	DPAK (2 Leads + Tab), SC-63, TO-252-3	4 V	10 V	Surface Mount	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.