IXFV36N50P

Obsolete

IXYS

MOSFET N-CH 500V 36A PLUS220

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Obsolete

IXYS

MOSFET N-CH 500V 36A PLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFV36N50P

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3, Short Tab
Power Dissipation (Max) [Max]	540 W
Supplier Device Package	PLUS220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Type	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)
IXYS IXFV36N50PS	93 nC	500 V	540 W	30 V	PLUS-220SMD	36 A	5 V	-55 °C	150 °C	PLUS-220SMD	N-Channel	Surface Mount	MOSFET (Metal Oxide)	5500 pF	10 V
IXYS IXFV36N50P	93 nC	500 V	540 W	30 V	TO-220-3 Short Tab	36 A	5 V	-55 °C	150 °C	PLUS220	N-Channel	Through Hole	MOSFET (Metal Oxide)	5500 pF	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 36A (Tc) 540W (Tc) Through Hole PLUS220

Technical documentation and resources

No documents available