AOT280A60L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 14A TO220

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 14A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT280A60L

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

Part	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case
Alpha & Omega Semiconductor Inc. AOT280A60L	Through Hole	N-Channel	3.6 V	600 V	20 V	14 A	156 W	23.5 nC	280 mOhm	TO-220	-55 °C	150 °C	1350 pF	10 V	MOSFET (Metal Oxide)	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 14A (Tc) 156W (Tc) Through Hole TO-220

Technical documentation and resources