IXFC14N60P

Obsolete

IXYS

MOSFET N-CH 600V 8A ISOPLUS220

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Obsolete

IXYS

MOSFET N-CH 600V 8A ISOPLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFC14N60P

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUS220™
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	630 mOhm
Supplier Device Package	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)
IXYS IXFC14N60P	8 A	ISOPLUS220™	30 V	10 V	2500 pF	MOSFET (Metal Oxide)	ISOPLUS220™	-55 °C	150 °C	125 W	Through Hole	5.5 V	630 mOhm	N-Channel	36 nC	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 8A (Tc) 125W (Tc) Through Hole ISOPLUS220™

Technical documentation and resources

No documents available