RN1911FE,LF(CT

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Toshiba Semiconductor and Storage

NPN X 2 BRT Q1BSR=10KOHM Q1BER=I

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Toshiba Semiconductor and Storage

NPN X 2 BRT Q1BSR=10KOHM Q1BER=I

Technical Specifications

Parameters and characteristics for this part

Specification	RN1911FE,LF(CT

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	100 mW
Supplier Device Package	ES6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Package / Case	Current - Collector (Ic) (Max) [Max]	Mounting Type	Transistor Type	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Base (R1)	Power - Max [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage RN1911(T5L,F,T)	6-TSSOP SC-88 SOT-363	100 mA	Surface Mount	2 NPN - Pre-Biased (Dual)	250 MHz	100 nA	300 mV	120	4.7 kOhms	100 mW	US6	50 V
Toshiba Semiconductor and Storage RN1911,LXHF(CT	6-TSSOP SC-88 SOT-363	100 mA	Surface Mount	2 NPN - Pre-Biased (Dual)	250 MHz	100 nA	300 mV	120		200 mW	US6	50 V
Toshiba Semiconductor and Storage RN1911FE,LF(CT	SOT-563 SOT-666	100 mA	Surface Mount	2 NPN - Pre-Biased (Dual)	250 MHz	100 nA	300 mV	120		100 mW	ES6	50 V

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General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Technical documentation and resources