Specification	BSZ0909NDXTMA1

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	20 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
FET Feature Drive Voltage	4.5 V
Gate Charge (Max)	2.6 nC
Input Capacitance (Ciss) (Max)	360 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerVDFN
Package Name	PG-WISON-8
Power - Max	17 W
Rds On (Max)	18 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2 V

BSZ0909 Series

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Technology	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	FET Type	Vgs(th) (Max)	Mounting Type	Rds On (Max)	Package / Case	Vgs (Max)	Power - Max	Channel Count	Configuration	Configuration - Features	FET Feature	FET Feature Drive Voltage
INFINEON BSZ0909LSATMA1	10 V	4.5 V	30 V	26 nC	MOSFET (Metal Oxide)	1700 pF	-55 °C	150 °C	PG-TDSON-8 FL	19 A	40 A	N-Channel	2 V	Surface Mount	3 mOhm	8-PowerTDFN	20 V
INFINEON BSZ0909NDXTMA1			30 V	2.6 nC	MOSFET (Metal Oxide)	360 pF	-55 °C	150 °C	PG-WISON-8		20 A		2 V	Surface Mount	18 mOhm	8-PowerVDFN		17 W	2	N-Channel	Dual	Logic Level Gate	4.5 V

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