2SB1475-T1-A

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Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTORS

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Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTORS

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1475-T1-A

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	110
Frequency - Transition	50 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-70, SOT-323
Power - Max [Max]	150 mW
Supplier Device Package	SC-70
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max)	16 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Small Signal Bipolar Transistors

Part	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Operating Temperature	Package / Case	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Transistor Type
Renesas Electronics Corporation 2SB1475-T1-A	400 mV	Surface Mount	100 nA	SC-70	150 °C	SC-70, SOT-323	500 mA	110	50 MHz	16 V	150 mW	PNP

General part information

Small Signal Bipolar Transistors

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