STB27NM60ND

Obsolete

STMicroelectronics

MOSFET N-CH 600V 21A D2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 600V 21A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB27NM60ND

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	2400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Grade	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Vgs(th) (Max) @ Id	Package / Case	Technology	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STB27NM60ND	150 °C	21 A	Surface Mount	TO-263 (D2PAK)	Automotive	160 mOhm	10 V	AEC-Q101	5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	25 V	N-Channel	600 V	80 nC	2400 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 21A (Tc) 160W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources