IRF614

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Harris Corporation

ADVANCED POWER MOSFET

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Harris Corporation

ADVANCED POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	IRF614

Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.2 nC
Input Capacitance (Ciss) (Max) @ Vds	140 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	36 W
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

ADVANCED POWER MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
Harris Corporation IRF614	140 pF	MOSFET (Metal Oxide)	36 W	TO-220AB	250 V	Through Hole	20 V	-55 °C	150 °C	8.2 nC	TO-220-3	4 V	2 Ohm	N-Channel	2.7 A	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	695	$ 0.44

General part information

N-Channel 250 V 2.7A (Tc) 36W (Tc) Through Hole TO-220AB

Technical documentation and resources

No documents available