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Description

General part information

LTC1155 Series

The LTC1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no external components. Micropower operation, with 8μA standby current and 85μA operating current, allows use in virtually all systems with maximum efficiency.Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added in series with the current sense to prevent false triggering on high in-rush loads such as capacitors and incandescent lamps.The LTC1155 operates off of a 4.5V to 18V supply input and safely drives the gates of virtually all FETs. The LTC1155 is well suited for low voltage (battery-powered) applications, particularly where micropower "sleep" operation is required.The LTC1155 is available in both 8-pin PDIP and 8-pin SO packages.APPLICATIONSLaptop Power Bus SwitchingSCSI Termination Power SwitchingCellular Phone Power ManagementP-Channel Switch ReplacementRelay and Solenoid DriversLow Frequency Half H-BridgeMotor Speed and Torque Control

Technical Specifications

Parameters and characteristics for this part

SpecificationLTC1155CS8#PBF
Channel TypeIndependent
Driven ConfigurationHigh-Side
Gate ChannelN-Channel
Gate TypeN-Channel MOSFET, MOSFET
Input TypeNon-Inverting
Logic Voltage - VIH2 V
Logic Voltage - VIL0.8 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature (Max)70 °C
Operating Temperature (Min)0 °C
Package Length0.154 in
Package Name8-SOIC, 8-SO
Package Width3.9 mm
Voltage - Supply (Maximum)18 V
Voltage - Supply (Minimum)4.5 V

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