IRF7453PBF

Obsolete

Infineon Technologies

MOSFET N-CH 250V 2.2A 8SO

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Obsolete

Infineon Technologies

MOSFET N-CH 250V 2.2A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7453PBF

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	930 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	230 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IRF7453PBF	250 V	2.2 A	-55 °C	150 °C	930 pF	2.5 W	N-Channel	38 nC	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	230 mOhm	8-SO	5.5 V	30 V	Surface Mount	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 2.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

Technical documentation and resources