IPI045N10N3GXK

Obsolete

Infineon Technologies

MOSFET N-CH 100V 137A TO262-3

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 137A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI045N10N3GXK

Current - Continuous Drain (Id) @ 25°C	137 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	117 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	214 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Technology
Infineon Technologies IPI045N10N3GXK	4.5 mOhm	N-Channel	137 A	I2PAK TO-262-3 Long Leads TO-262AA	214 W	20 V	117 nC	100 V	Through Hole	6 V 10 V	-55 °C	175 ░C	PG-TO262-3	3.5 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 137A (Tc) 214W (Tc) Through Hole PG-TO262-3

Technical documentation and resources

No documents available