TK15S04N1L,LXHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 15A DPAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 15A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK15S04N1L,LXHQ

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	610 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	46 W
Rds On (Max) @ Id, Vgs	17.8 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Operating Temperature	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage TK15S04N1L,LXHQ	46 W	N-Channel	10 nC	4.5 V 10 V	610 pF	MOSFET (Metal Oxide)	175 °C	20 V	DPAK+	40 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	17.8 mOhm	2.5 V	Surface Mount	15 A

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General part information

N-Channel 40 V 15A (Ta) 46W (Tc) Surface Mount DPAK+

Technical documentation and resources