IXFP7N100P

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IXYS

MOSFET N-CH 1000V 7A TO220AB

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IXYS

MOSFET N-CH 1000V 7A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP7N100P

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2590 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	1.9 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6 V

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
IXYS IXFP7N100P	TO-220-3	10 V	300 W	N-Channel	1000 V	7 A	6 V	MOSFET (Metal Oxide)	TO-220-3	1.9 Ohm	Through Hole	30 V	-55 °C	150 °C	2590 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 3.29

General part information

N-Channel 1000 V 7A (Tc) 300W (Tc) Through Hole TO-220-3

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