MAX626ESA+T

Unknown

Analog Devices Inc./Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

MAX626ESA+T

Unknown

Analog Devices Inc./Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

Description Specifications Series Pricing CAD Documents

Description

General part information

MAX626 Series

Dual-Power MOSFET Drivers

Technical Specifications

Parameters and characteristics for this part

Specification	MAX626ESA+T

Channel Type	Independent
Current - Peak Output (Sink)	2 A
Current - Peak Output (Source)	2 A
Driven Configuration	Low-Side
Fall Time (Typ)	20 ns
Gate Channel	N-Channel, P-Channel
Gate Type	N-Channel, P-Channel MOSFET, MOSFET
Input Type	Inverting
Logic Voltage - VIH	2.4 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	85 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	25 ns
Voltage - Supply (Maximum)	18 V
Voltage - Supply (Minimum)	4.5 V

MAX626 Series

Dual-Power MOSFET Drivers

Part	Gate Type	Operating Temperature (Max)	Operating Temperature (Min)	Logic Voltage - VIH	Logic Voltage - VIL	Current - Peak Output (Sink)	Current - Peak Output (Source)	Package Length	Package Name	Package Width	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Gate Channel	Input Type	Driven Configuration	Channel Type	Number of Drivers	Mounting Type	Fall Time (Typ)	Rise Time (Typ)	Grade	Qualification
Analog Devices Inc./Maxim Integrated MAX626ESA+	MOSFET N-Channel P-Channel MOSFET	85 °C	-40 °C	2.4 V	0.8 V	2 A	2 A	0.154 in	8-SOIC	3.9 mm	18 V	4.5 V	N-Channel P-Channel	Inverting	Low-Side	Independent	2	Surface Mount	20 ns	25 ns
Analog Devices Inc./Maxim Integrated MAX626CPA+	MOSFET	70 °C	0 °C	2.4 V	0.8 V	2 A	2 A	0.3 in	8-DIP 8-PDIP	7.62 mm	18 V	4.5 V	N-Channel P-Channel	Inverting	Low-Side	Independent	2	Through Hole	20 ns	25 ns
Analog Devices Inc./Maxim Integrated MAX626MJA/883B	MOSFET N-Channel P-Channel MOSFET	125 °C	-55 °C	2.4 V	0.8 V	2 A	2 A	0.3 in	8-CDIP 8-CERDIP	7.62 mm	18 V	4.5 V	N-Channel P-Channel	Inverting	Low-Side	Independent	2	Through Hole	20 ns	25 ns	Military	MIL-STD-883
Analog Devices Inc./Maxim Integrated MAX626CSA+T	MOSFET N-Channel P-Channel MOSFET	70 °C	0 °C	2.4 V	0.8 V	2 A	2 A	0.154 in	8-SOIC	3.9 mm	18 V	4.5 V	N-Channel P-Channel	Inverting	Low-Side	Independent	2	Surface Mount	20 ns	25 ns
Analog Devices Inc./Maxim Integrated MAX626EPA+	MOSFET N-Channel P-Channel MOSFET	85 °C	-40 °C	2.4 V	0.8 V	2 A	2 A	0.3 in	8-DIP 8-PDIP	7.62 mm	18 V	4.5 V	N-Channel P-Channel	Inverting	Low-Side	Independent	2	Through Hole	20 ns	25 ns
Analog Devices Inc./Maxim Integrated MAX626ESA+T	MOSFET N-Channel P-Channel MOSFET	85 °C	-40 °C	2.4 V	0.8 V	2 A	2 A	0.154 in	8-SOIC	3.9 mm	18 V	4.5 V	N-Channel P-Channel	Inverting	Low-Side	Independent	2	Surface Mount	20 ns	25 ns
Analog Devices Inc./Maxim Integrated MAX626CSA+	MOSFET	70 °C	0 °C	2.4 V	0.8 V	2 A	2 A	0.154 in	8-SOIC	3.9 mm	18 V	4.5 V	N-Channel P-Channel	Inverting	Low-Side	Independent	2	Surface Mount	20 ns	25 ns

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

MAX626ESA+T | Datasheet

Package Drawing - Small-Outline IC, Narrow (0.15in)

MAX626: Military Datasheet

MAX626-TSC428: Dual-Power MOSFET Drivers Data Sheet (Rev.1)