CUS02(TE85L,Q,M)

Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A US-FLAT

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Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A US-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CUS02(TE85L,Q,M)

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-323, SC-76
Speed	200 mA, 500 ns
Supplier Device Package	US-FLAT (1.25x2.5)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	470 mV

Part	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - Forward (Vf) (Max) @ If	Mounting Type
Toshiba Semiconductor and Storage CUS02(TE85L,Q,M)	US-FLAT (1.25x2.5)	1 A	30 V	100 µA	SC-76 SOD-323	Schottky	150 °C	-40 °C	200 mA 500 ns	470 mV	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 30 V 1A Surface Mount US-FLAT (1.25x2.5)

Technical documentation and resources