TSM340N06CH X0G

Active

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 60V 30A TO251

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 60V 30A TO251

Technical Specifications

Parameters and characteristics for this part

Specification	TSM340N06CH X0G

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16.6 nC
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	66 W
Rds On (Max) @ Id, Vgs	34 mOhm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Power Dissipation (Max)	Operating Temperature	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C
Taiwan Semiconductor Corporation TSM340N06CP ROG	16.6 nC	N-Channel	34 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252 (DPAK)	66 W	150 °C	2.5 V	60 V	20 V	Surface Mount	4.5 V 10 V	MOSFET (Metal Oxide)	30 A
Taiwan Semiconductor Corporation TSM340N06CH X0G	16.6 nC	N-Channel	34 mOhm	TO-251-3 Stub Leads IPAK	TO-251 (IPAK)	66 W	150 °C	2.5 V	60 V	20 V	Through Hole	4.5 V 10 V	MOSFET (Metal Oxide)	30 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 30A (Tc) 66W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources