RQ3E120BNTB
ActiveRohm Semiconductor
MOSFET TRANSISTOR, N CHANNEL, 12 A, 30 V, 0.0066 OHM, 10 V, 2.5 V ROHS COMPLIANT: YES
RQ3E120BNTB
ActiveRohm Semiconductor
MOSFET TRANSISTOR, N CHANNEL, 12 A, 30 V, 0.0066 OHM, 10 V, 2.5 V ROHS COMPLIANT: YES
Description
General part information
RQ3E120BN Series
High power package RQ3E120BN is middle power MOSFET for switching application.
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ3E120BNTB |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 12 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 29 nC |
| Input Capacitance (Ciss) (Max) | 1500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 3.2 mm |
| Package Name | 8-HSMT |
| Package Width | 3 mm |
| Power Dissipation (Max) | 2 W |
| Rds On (Max) | 9.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
HSMT8 Single Cu Inner Structure
List of Transistor Package Thermal Resistance
Calculation of Power Dissipation in Switching Circuit
Two-Resistor Model for Thermal Simulation
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
PCB Layout Thermal Design Guide
About Export Regulations
Anti-Whisker formation - Transistors
Part Explanation
Basics of Thermal Resistance and Heat Dissipation
Notes for Calculating Power Consumption:Static Operation
Taping Information
Package Dimensions
Method for Monitoring Switching Waveform
What is a Thermal Model? (Transistor)
How to Create Symbols for PSpice Models
ESD Data
Precautions When Measuring the Rear of the Package with a Thermocouple
Impedance Characteristics of Bypass Capacitor
Measurement Method and Usage of Thermal Resistance RthJC
Explanation for Marking
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
How to Use LTspice® Models
Importance of Probe Calibration When Measuring Power: Deskew
About Flammability of Materials
RQ3E120BN Data Sheet
MOSFET Gate Drive Current Setting for Motor Driving
Condition of Soldering / Land Pattern Reference
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Types and Features of Transistors
What Is Thermal Design
Temperature derating method for Safe Operating Area (SOA)
How to Use LTspice® Models: Tips for Improving Convergence
Moisture Sensitivity Level - Transistors
Notes for Temperature Measurement Using Thermocouples
Compliance of the RoHS directive
MOSFET Gate Resistor Setting for Motor Driving