BCP 56-10 E6433

Obsolete

Infineon Technologies

TRANS NPN 80V 1A SOT223-4

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Obsolete

Infineon Technologies

TRANS NPN 80V 1A SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	BCP 56-10 E6433

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	63 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	PG-SOT223-4
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Transistor Type	Supplier Device Package	Power - Max [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature
Infineon Technologies BCP 56-10 H6433	1 A	100 MHz	NPN	PG-SOT223-4	2 W	TO-261-4 TO-261AA	100 nA	Surface Mount	63 hFE	500 mV	80 V	150 °C
Infineon Technologies BCP 56-10 E6433	1 A	100 MHz	NPN	PG-SOT223-4	2 W	TO-261-4 TO-261AA	100 nA	Surface Mount	63 hFE	500 mV	80 V	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 2 W Surface Mount PG-SOT223-4

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