IXTY12N06TTRL

Obsolete

IXYS

MOSFET N-CH 60V 12A TO252

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 60V 12A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	IXTY12N06TTRL

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.4 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	33 W
Rds On (Max) @ Id, Vgs [Max]	85 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXTY12N06TTRL	TO-252AA	33 W	85 mOhm	Surface Mount	N-Channel	MOSFET (Metal Oxide)	3.4 nC	60 V	4 V	12 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	10 V	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 12A (Tc) 33W (Tc) Surface Mount TO-252AA

Technical documentation and resources

No documents available