IKD03N60RFAATMA1

NRND

Infineon Technologies

IGBT 600V 5A 53.6W TO252-3

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NRND

Infineon Technologies

IGBT 600V 5A 53.6W TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IKD03N60RFAATMA1

Current - Collector (Ic) (Max)	5 A
Current - Collector Pulsed (Icm)	7.5 A
Gate Charge	17.1 nC
Grade	Automotive
IGBT Type	Trench
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	53.6 W
Qualification	AEC-Q101
Reverse Recovery Time (trr)	31 ns
Supplier Device Package	PG-TO252-3
Switching Energy	40 µJ, 50 µJ
Td (on/off) @ 25°C	10 ns
Td (on/off) @ 25°C	128 ns
Test Condition	2.5 A, 68 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Package / Case	Supplier Device Package	IGBT Type	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Switching Energy	Test Condition	Mounting Type	Vce(on) (Max) @ Vge, Ic	Qualification	Current - Collector (Ic) (Max)	Grade
Infineon Technologies IKD03N60RFATMA1	7.5 A	-40 C	175 °C	6.5 A	31 ns	10 ns	128 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	Trench Field Stop	17.1 nC	600 V	53.6 W	40 µJ 50 µJ	2.5 A 15 V 68 Ohm 400 V	Surface Mount	2.5 V
Infineon Technologies IKD03N60RFAATMA1	7.5 A	-40 C	175 °C		31 ns	10 ns	128 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	Trench	17.1 nC	600 V	53.6 W	40 µJ 50 µJ	2.5 A 15 V 68 Ohm 400 V	Surface Mount	2.5 V	AEC-Q101	5 A	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench 600 V 5 A 53.6 W Surface Mount PG-TO252-3

Technical documentation and resources