Zenode.ai Logo
TPH1R306P1 - 12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.00128 Ω@10V, SOP Advance, U-MOSⅨ-H

TPH7R204PL,LQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 40 V, 0.0072 Ω@10V, SOP ADVANCE, U-MOSⅨ-H

Find alt
TPH1R306P1 - 12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.00128 Ω@10V, SOP Advance, U-MOSⅨ-H

TPH7R204PL,LQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 40 V, 0.0072 Ω@10V, SOP ADVANCE, U-MOSⅨ-H

Find alt

Description

General part information

TPH7R204PL Series

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 0.0072 Ω@10V, SOP Advance, U-MOSⅨ-H

Technical Specifications

Parameters and characteristics for this part

SpecificationTPH7R204PL,LQ
Current - Continuous Drain (Id) (Tc)48 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)24 nC, 24 nC
Input Capacitance (Ciss) (Max)2040 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / Case8-PowerVDFN
Package Length5 mm
Package Name8-SOP Advance
Package Width5 mm
Power Dissipation (Max)69 W
Rds On (Max)9.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

RC Snubbers for Step-Down Converters
TPH7R204PL Data sheet/English
Motor Control (Vacuum Cleaners)
MOSFET Self-Turn-On Phenomenon
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Structures and Characteristics: Power MOSFET Application Notes
TPH7R204PL Data sheet/Japanese
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
Simplified CFD Model Application Note
Selection Guide MOSFETs 2025 Rev1.0
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Resonant Circuits and Soft Switching
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
MOSFET Secondary Breakdown
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Maximum Ratings: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
MOSFET SPICE model grade
Avalanche energy calculation
Calculating the Temperature of Discrete Semiconductor Devices
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Electrical Characteristics: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes