Specification	SI2304DDS-T1-GE3

Current - Continuous Drain (Id) (Ta)	3.3 A
Current - Continuous Drain (Id) (Tc)	3.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	6.7 nC
Input Capacitance (Ciss) (Max)	235 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	1.7 W, 1.1 W
Rds On (Max)	60 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

SI2304 Series

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Vgs (Max)	Rds On (Max)	Mounting Type	Technology	Power Dissipation (Max)	Package Name	FET Type	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Drain to Source Voltage (Vdss)
Vishay Dale SI2304DDS-T1-GE3	10 V	4.5 V	2.2 V	20 V	60 mOhm	Surface Mount	MOSFET (Metal Oxide)	1.1 W 1.7 W	SOT-23-3 (TO-236)	N-Channel	6.7 nC	3.6 A	3.3 A	-55 °C	150 °C	235 pF	SC-59 SOT-23-3 TO-236-3	30 V
Vishay Dale SI2304DDS-T1-BE3	10 V	4.5 V	2.2 V	20 V	60 mOhm	Surface Mount	MOSFET (Metal Oxide)	1.1 W 1.7 W	SOT-23-3 (TO-236)	N-Channel	6.7 nC	3.6 A	3.3 A	-55 °C	150 °C	235 pF	SC-59 SOT-23-3 TO-236-3	30 V

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