IXTH3N200P3HV

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LITTELFUSE

DISC MOSFET N-CH STD-POLAR3 TO-247AD/ TUBE

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IXTH3N200P3HV

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LITTELFUSE

DISC MOSFET N-CH STD-POLAR3 TO-247AD/ TUBE

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXTH3 Series

Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH3N200P3HV

Current - Continuous Drain (Id) (Tc)	3 A
Drain to Source Voltage (Vdss)	2000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	70 nC
Input Capacitance (Ciss) (Max)	1860 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247 (IXTH)
Power Dissipation (Max)	520 W
Rds On (Max)	8 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	5 V

IXTH3 Series

DiscMosfet N-CH Std-HiVoltage TO-247AD

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	Package / Case	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Technology	Mounting Type	Vgs(th) (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)
LITTELFUSE IXTH3N100P	10 V	39 nC	1100 pF	3 A	TO-247 (IXTH)	TO-247-3	125 W	20 V	1000 V	4.8 Ohm	MOSFET (Metal Oxide)	Through Hole	4.5 V	N-Channel	-55 °C	150 °C
LITTELFUSE IXTH3N120	10 V	39 nC	1300 pF	3 A	TO-247 (IXTH)	TO-247-3	200 W	20 V	1200 V	4.5 Ohm	MOSFET (Metal Oxide)	Through Hole	4.5 V	N-Channel	-55 °C	150 °C
LITTELFUSE IXTH3N200P3HV	10 V	70 nC	1860 pF	3 A	TO-247 (IXTH)	TO-247-3	520 W	20 V	2000 V	8 Ohm	MOSFET (Metal Oxide)	Through Hole	5 V	N-Channel	-55 °C	150 °C
LITTELFUSE IXTH3N120	10 V	39 nC	1300 pF	3 A	TO-247 (IXTH)	TO-247-3	200 W	20 V	1200 V	4.5 Ohm	MOSFET (Metal Oxide)	Through Hole	4.5 V	N-Channel	-55 °C	150 °C
LITTELFUSE IXTH3N100P	10 V	39 nC	1100 pF	3 A	TO-247 (IXTH)	TO-247-3	125 W	20 V	1000 V	4.8 Ohm	MOSFET (Metal Oxide)	Through Hole	4.5 V	N-Channel	-55 °C	150 °C
LITTELFUSE IXTH3N150	10 V	38.6 nC 38.6 nC	1375 pF	3 A	TO-247 (IXTH)	TO-247-3	250 W	30 V	1500 V	7.3 Ohm	MOSFET (Metal Oxide)	Through Hole	5 V	N-Channel	-55 °C	150 °C
LITTELFUSE IXTH3N150	10 V	38.6 nC 38.6 nC	1375 pF	3 A	TO-247 (IXTH)	TO-247-3	250 W	30 V	1500 V	7.3 Ohm	MOSFET (Metal Oxide)	Through Hole	5 V	N-Channel	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Power Semiconductor Soldering: Techniques for Precision and Durability

Datasheet

Forward-Biased, Reverse-Biased, and Short-Circuit Safe Operating Area of MOSFETs and IGBTs

IXTH3N200P3HV | Datasheet