SSM6J414TU,LF

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Toshiba Semiconductor and Storage

MOSFET P CH 20V 6A UF6

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Toshiba Semiconductor and Storage

MOSFET P CH 20V 6A UF6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J414TU,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1650 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	22.5 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM6J414TU,LF	1650 pF	Surface Mount	MOSFET (Metal Oxide)	6-SMD Flat Leads	1.5 V 4.5 V	UF6	8 V	1 W	6 A	P-Channel	20 V	150 °C	22.5 mOhm	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 6A (Ta) 1W (Ta) Surface Mount UF6

Technical documentation and resources