
LM5100MX
ObsoleteIC GATE DRVR HALF-BRIDGE 8SOIC

LM5100MX
ObsoleteIC GATE DRVR HALF-BRIDGE 8SOIC
Description
General part information
LM5100 Series
The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).
An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.
The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).
Technical Specifications
Parameters and characteristics for this part
| Specification | LM5100MX |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 1.6 A |
| Current - Peak Output (Source) | 1.6 A |
| Driven Configuration | Half-Bridge |
| Fall Time (Typ) | 600 ns |
| Gate Channel | N-Channel |
| Gate Type | N-Channel MOSFET, MOSFET |
| High Side Voltage - Max (Bootstrap) | 118 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIH | 8 V |
| Logic Voltage - VIL | 3 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Rise Time (Typ) | 600 ns |
| Voltage - Supply (Maximum) | 14 V |
| Voltage - Supply (Minimum) | 9 VDC |
Pricing
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